At the same time, stress and active anion will destroy the oxidicfilm.
与此同时,应力和活性阴离子对氧化膜的破坏造成孔蚀;
2
A new kind of silicon oxidicfilm on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积(CVD)的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
3
The stability and composition of oxidicfilm and the C-V characteristics of MOS structure have also been tested and analysed theoretically in this paper.