A serial of technologies for oxide films growing, which is most fitful for the current etching and formation linkage line. The related mechanisms are also included.
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
3
The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures.