The main results obtained are as follows:1. The ultra-fast characteristics of photoconductive switches were mainly determined by the optical pulse width and the carrier lifetime of the chip material.
光电导开关的超快特性主要由触发光脉冲脉宽和开关芯片材料载流子复合寿命决定。
2
Based on the photoconductive method the Energy Gap Measuring Device for Semiconductor Material-Type DB-1 has been developed.