The third stage etching in current method is a time-fixed etching, which easily causes under etching or overetching of the metal layer.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
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The influence on overetching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
Characteristic: Xeno? III Single Step Self etching Dental Adhesive avoids sensitivity by sealing dentinal tubules and eliminating problems of over drying and over - etching of dentin.