Simulation results show that the total amount of impurity in the buffer layer or transparent an - ode is the key to determine the on-statevoltage drop of GCT device.
模拟结果表明，缓冲层与透明阳极各自区域中的杂质总量是决定GCT的通态压降的关键因素。
2
Routine shunt reactor fixed on the EHV transmission system can not guarantee the transmission capability and steady statevoltage of system under different operation modes.
常规并联电抗器固定接入超高压输电系统，不能保证各种运行方式下系统输送能力和母线的稳态电压。
3
The impacts of aerating state and heating voltageon the response and the sensitivity were studied.