The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-stateresistance, thereby advantageously reducing total 'on' resistance of the device.
增强的空穴沟道迁移率导致导通电阻的沟道部分减小，因此，有利地减少了装置的全“导通”电阻。
2
It eliminates the detection error which produced by the non-linearity of the power MOSFET's on-stateresistance and the temperature influence, which insures high detection precision.
消除了功率管导通电阻受非线性和温度的影响而产生的检测误差，检测精度高。
3
If weattempt to take on too much intensity too soon, our inner state—ormood of resistance—will actually hinder the chi flow, causing moreenergetic disruptions.