The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
系统地研究了薄膜的微结构、磁性、隧道磁电阻效应(TMR)和巨霍耳效应(GHE)。
2
Provided is a monitor element and a magneto-resistanceeffect element substrate which can be prevented from short circuits, and also to provide a method of manufacturing the monitor element.