The memory element includes a magnetictunneljunction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
2
A magnetic random access memory device may include a semiconductor substrate, a magnetictunneljunction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
3
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetictunneljunction structure.