Nanometer multilayer metal films have been emphasized for their grand magneticresistance.
纳米金属多层膜由于其巨磁电阻性能而受到人们的重视。
2
The semiconductor memory device can reduce the writing current thereof without degrading the magneticresistance value and thermal stability thereof.
本发明的半导体存储装置可降低其写入电流且不会劣化其磁阻值与热稳定性。
3
Measuring velocity technology can be actualized by muzzle loops, extrapolating method, on-board sensor and GMR (the giant magneticresistance) turns-counting.