The mobility and the lifetime of minoritycarriers in polysilicon films are two key parameters of current gain increment.
多晶硅膜的少子迁移率和寿命是提高电流增益的两个关键参数。
2
The numerical results show that the photoconductive decay curve for minoritycarriers of the wafer can be expressed by the sum of the first mode and the second mode of this solution.
数值计算结果表明，薄片的少子光电导衰退曲线可以用这种解的一次模和二次模之和来表示。
3
A new method for measuring the life time of minority current carriers in semiconductors is described.