Considering the tunneling effect and the Schottky effect, the metalsemiconductorcontact is simulated by using self consistent ensemble Monte Carlo method.
运用自洽的蒙特卡罗方法模拟了肖特基接触的隧穿效应。
2
The resistance of the metal probe to semiconductorcontact can be quite high.
金属探头与半导体接触时的电阻可能相当高。
3
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).