英语词汇metal semiconductor barrier怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

metal semiconductor barrier

释义

metal semiconductor barrier

翻译

金属半导体势垒

以上为机器翻译结果，快速获取精准的人工翻译结果，建议选择有道人工翻译

网络释义

1
?金属
metal cocky accumbent process 金属自对准工艺 metal semiconductor barrier 金属半导体接触势垒 metal semiconductor device 金属半导体接触掐 ..
2
?金属半导体接触势垒
... metal semiconductor barrier 金属 ; 金属半导体接触势垒 metal-barrier-metal junction 金属阳极氧化物 metal median crash barrier 金属防撞栏 ...
3
?半导体接触势垒
... metal self aligned process 金属自对准工艺 metal semiconductor barrier 金属 半导体接触势垒 metal semiconductor device 金属半导体接触掐 ...

短语

1
metal-semiconductor barrier
金属半导体势垒

双语例句

1
Electrons from the metal will have to surmount the potential barrier to enter the semiconductor.
金属中的电子必须克服这个势垒层才能进入半导体。
2
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
3
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。

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单词	metal semiconductor barrier
释义	metal semiconductor barrier 翻译金属半导体势垒以上为机器翻译结果，快速获取精准的人工翻译结果，建议选择有道人工翻译网络释义 1 ?金属 metal cocky accumbent process 金属自对准工艺 metal semiconductor barrier 金属半导体接触势垒 metal semiconductor device 金属半导体接触掐 .. 2 ?金属半导体接触势垒 ... metal semiconductor barrier 金属 ; 金属半导体接触势垒 metal-barrier-metal junction 金属阳极氧化物 metal median crash barrier 金属防撞栏 ... 3 ?半导体接触势垒 ... metal self aligned process 金属自对准工艺 metal semiconductor barrier 金属半导体接触势垒 metal semiconductor device 金属半导体接触掐 ... 短语 1 metal-semiconductor barrier 金属半导体势垒双语例句 1 Electrons from the metal will have to surmount the potential barrier to enter the semiconductor. 金属中的电子必须克服这个势垒层才能进入半导体。 2 A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16). 一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。 3 Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact. 肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
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