Dishing problem of copper multilayerinterconnection in ULSI was introduced, and the reasons and influencing factors were analyzed.
介绍了UL SI多层铜互连线中的碟形坑问题，对其产生的原因及影响因素进行了分析。
2
Method for reducing metal, multilayerinterconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
3
Finally the relationship between high - order interconnection and multilayer network architecture is discussed.