Gallium nitride is grown by plasma-assisted molecular-beamepitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
2
Since molecularbeamepitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
自从分子束外延生长技术出现以来，半导体物理的研究获得许多惊人的突破。
3
These devices are fabricated utilizing molecularbeamepitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.