For the sake of researching of radiation effect of MOSstructure irradiated by electron, we adopted 0.
为了研究MOS结构的电子辐照效应，采取了能量为0。
2
The investigated results are very important for the research and fabrication of the MOSstructure gas sensors.
研究结果对于MOS结构的半导体气敏传感器的研制具有重要的意义。
3
The stability and composition of oxidic film and the C-V characteristics of MOSstructure have also been tested and analysed theoretically in this paper.