In this paper, two kinds of standards CMOS technology memorycellstructure are introduced.
本文提出了两种基于标准CMOS工艺的存储单元结构。
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The invention operates a memorycell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memorycell.
More preferably, the device structure contains a memorycell having three quantum Wells that can be arranged and constructed to define two different memory states.