Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
2
The infrared absorption coefficient of LNO thin films is increased with increase of its thickness, and reduced with increase of the infrared wavelength.
LNO薄膜的红外吸收系数随其厚度的增加而增加，且随红外波长的增大而减小。
3
The LNO thin films annealed at lower temperature have (110) preferred orientation, while the films annealed at higher temperature have (100) preferred orientation.