An ultra low insertionloss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
2
It is characterized by good frequency selectivity, low insertionloss and high attenuation of specified frequency.
它具有频率选择性好,通带插损低,对陷波频点抑制较高的优点。
3
The elliptic-function filter using hairpin stepped impedance has such advantages as compact structure, low insertionloss, broad-stopband and high steep.