The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.

Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.

Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.