The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements.
利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导（QSSPC）分析了氮化硅薄膜的特性。
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The obtained samples were characterized by scanning electron microscopy (SEM), Fourier transform infraredspectroscopy (FT-IR), X-ray diffraction (XRD), and thermogravimetric analysis (TGA).
Then their structures and composing are analyzed by Fourier transform infraredspectroscopy(FT-IR), X-ray diffraction(X-RD), scanning electron microscopy(SEM).