The base current and the junctionleakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大,集电极电流、击穿电压减小。
2
The two tests susceptible to junction heating are the forward voltage and leakage current tests.
对结发热最敏感的两种测试是正向电压测试和漏电流测试。
3
Leakage current theory for reverse PN junction is modified on the basis of theoretic analysis.