The microwave solid state noise diodes are investigated based on the PN junction avalanche multiplication theory with tunneling penetration.
本文以带有隧道穿透的PN结雪崩倍增理论，研究了微波固体噪声二极管。
2
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
3
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.