There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
2
The edge pre-breakdown of planar-type avalanche photodiode (APD) is resulted from the intense electric field at the junction bend.
平面型雪崩光电二极管(APD)在结弯曲处具有高的电场，导致在结边缘的提前击穿。
3
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.