The processes are closely related to carrier concentration and latticetemperature.
这个过程与载流子浓度和晶格温度有密切关系。
2
Using consecutive conditions on interfaces, the expressions of electron gas and latticetemperature in Laplace transfonn domain are obtained for each layer of the three-layer thin metal film.
利用界面连续条件，推得三层金属薄膜各层薄膜内电子温度和晶格温度在拉普拉斯域内的解析表达式。
3
The influence of Mg concentration in doping on phase matching temperature, phase matching Angle, optical homogeneity, lattice parameter and density of the crystal is also stated.