The latticestrain and band repulsion affecting band gap is investigated.
分析了晶格畸变和能带间排斥效应对带隙的影响。
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In addition, theoretical analysis indicates that the reduction in the lattice thermal conductivity with vacancy defects can be explained by the enhanced point-defect scattering due to latticestrain.
Strained silicon is a fundamental component of all recent microprocessors. The reason for its success is that local strain-induced deformation in the crystal lattice improves processor performance.