The general relationship between average mobility of carries and average conductivity in a doped layer with an arbitrary impurity distribution has been established.
本文建立了非均匀次掺杂层载流子平均迁移率与平均电导的普遍关系。
2
This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials.
本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。
3
Hardening and strengthening of metals that result from alloying in which a solid solution is formed. The presence of impurity atoms restricts dislocation mobility.