After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATTdiode.
然后利用ADS软件对几种微带谐振器进行了分析和计算，使雪崩二极管的负载阻抗与其匹配。
2
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATTdiode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
3
After this, we analyzed and computed several microstrip resonators with ADS, making impedance match between the resonator and IMPATTdiode. At the same time, we simulate the transition with HFSS.