The reliability of an interconnectionfilm and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.
该半导体晶片上形成的一层互连膜与绝缘膜的可靠性可以在加速条件下加以评估。
2
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等,并对它们的优缺点进行了分析。
3
Metallization is the process of depositing a thin film of metal and patterning it to form the desired interconnection arrangement.