The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等,并对它们的优缺点进行了分析。
2
The RF characteristics of bonding wire interconnection in a simple package model were simulated.
针对一种用键合线连接的简单封装模型进行射频性能的模拟。
3
Metal wire bondinginterconnection is the key means in the internal matching technology of RF power transistor.