Finally, a series of field and laboratory tests have been carried out with this sample machine, which provides data support for further study on the rule of insulator leakage pulse current.
The semiconductor layer and intermediate insulator of the SOI are etched in crossed region of the flexible beam cross and in a looped region above the support body.
在柔性梁的交叉区域中和在支撑体的上方的环形区域中对SOI的半导体层和中间绝缘层进行蚀刻。
3
The trench is etched in the support substrate exposing the intermediate insulator, which is then etched to form a gap between the mass body and flexible beam cross.