This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon (a-Si: h) film in recent years.
本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。
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After irradiated by ultraviolet (UV) light with a deuterium lamp for 5 h, the thickness of film decreases largely by 55%, and the refractive index of film changes from 1.484 to 1.445 at 550 nm.