Preferentialtrapping ofelectrons by iron centers was shown by Hallmobility measurements on optically-excited charge carriers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
2
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hallmobility of the carriers.
的钝化效应减少了载流子的散射中心,降低了晶界势垒,有效地提高了载流子的迁移率。
3
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.