The study result shows that the Hallcoefficient (absolute value) of n-Si samples will decrease with the increase of compressive stress.
研究结果表明,样品的霍尔系数绝对值随着作用于样品压缩应力的增加而减少。
2
Hallcoefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
3
We conclude that the extremum factor of the Hallcoefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.