The flat bottom gate provides full perimeter seating against the seat, eliminating pocket in the bottom of the seat that can trap process media and prevent the valve from fully closing.

Both gate and field oxides generally are grown by a thermal oxidation process because only thermal oxidation can provide the highest-quality oxides having the lowest. interface trap densities.

TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor, and a method of precise measurement and characterization the trap density and accumulative failure are presented.