英语词汇gate leakage current怎么读，是什么意思，单词翻译、读音、固定搭配用法和短语词组及例句-英汉双解词典

单词

gate leakage current

释义

gate leakage current

简明释义

栅漏电流：指在MOSFET器件中，由于绝缘层的缺陷或不完整，导致电流从栅极泄漏到源极或漏极的现象。

网络释义

1
?漏电流
栅级漏电流（Gate leakage current）随着栅级氧化层厚度的减小变得越来越突出（130nm工艺下大约为12一16埃），而气每减小2埃栅级漏电流将会有一个数量级的提高，随...
2
?栅极漏电流
... gate land || 浇口面 gate leakage current || 栅极漏电流 gate level simulator || 门级模拟程序 ...

短语

1
drain gate leakage current
漏栅漏电流
2
gate leakage current density
栅漏电流密度
3
Gate-emitter leakage current
发射极间的漏电流

双语例句

1
The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect.
这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。
2
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
3
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。

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单词	gate leakage current
释义	gate leakage current 简明释义栅漏电流：指在MOSFET器件中，由于绝缘层的缺陷或不完整，导致电流从栅极泄漏到源极或漏极的现象。网络释义 1 ?漏电流栅级漏电流（Gate leakage current）随着栅级氧化层厚度的减小变得越来越突出（130nm工艺下大约为12一16埃），而气每减小2埃栅级漏电流将会有一个数量级的提高，随... 2 ?栅极漏电流 ... gate land \|\| 浇口面 gate leakage current \|\| 栅极漏电流 gate level simulator \|\| 门级模拟程序 ... 短语 1 drain gate leakage current 漏栅漏电流 2 gate leakage current density 栅漏电流密度 3 Gate-emitter leakage current 发射极间的漏电流双语例句 1 The improvements are most likely due to the reduction of the gate leakage current and the charge injection effect. 这些效能改进的原因可以归之于经过表面处理后，闸极漏电流的降低以及载子注入的减少。 2 However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected. 但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。 3 Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current. 各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
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