The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
3
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.