In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gatecharge test.
为了更直观地描述低压大电流VDMOS器件特性,对器件栅电荷特性进行了测量和提取。
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Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gatecharge storage transistor (11).
This article takes gatecharge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.