A technique for the fabrication of silicon cone cathode array by using anisotropic and isotropicetching has been reported in this paper.
详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。
2
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropicetching to anisotropic etching.
在直流功率一定时,工作气压的降低会导致刻蚀速率的增加,并且刻蚀由各向同性转变为各向异性。
3
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.