Under hotcarrierstress, device degradation is the consequence of hotcarrier induced defect generation locally at drain side.
在热载流子应力条件下，器件的退化主要是由于在漏极附近由热载流子产生的损伤缺陷引起的。
2
The hotcarrier effects (HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.