Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodicetching method.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
2
A tunneling accelerometer is fabricated and characterized based on the extension of the silicon-glass anodic-bonding and deep etching releasing process provided by Peking University.
提出了一种基于北京大学硅玻璃键合深刻蚀释放工艺的扩展工艺，用来加工微型隧道加速度计。
3
The importance of surface cleaning before replating, reverse electro-etching (anodic treatment) as well as low-voltage and small-current plating, and some problems needing attention were emphasized.