In this paper a laser way for obtaining "whisker" of semiconductor GaAs is presented and the prospect of using new material is simply described.
本文报道了获取半导体砷化镓“晶须”的激光方法，并简述了新材料的应用前景。
2
The experiment indicate that the deep energy trap is benefit to increase the ability of GaAs photoconductive switches absorbing long wavelength limit laser pulse obviously.
实验表明深能级的引入有利于开关对长波限激光脉冲的吸收。
3
Being a core part of laser beam system, the output coupling mirror are often made of ZnSe, Ge, GaAs as base materials.