The device could be integrated monolithically and planarly with GaAsFET.
这种器件可与FET实现平面集成。
2
In order to make the GaAsFET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
3
It lists and analyzes the operating principle and application of the single diode, double diode and single GaAsFET linearer and finds that they are all inconvenient to be adjusted.