In this dissertation, we will investigate the application of several high-k dielectric and metal gate process technologies.
在本论文中,吾人将探讨数种高介电系数介电层与金属闸极的研究与应用。
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At the 2010 IEEE International Electron Devices Meeting in San Francisco next week, Samsung will present a paper on a rival technology: ''gate-last high-k/metal gate devices.''