The growth process of the films was in situ monitored by reflective highenergyelectron diffraction (RHEED).
通过反射高能电子衍射(RHEED)仪原位实时监测薄膜生长,研究薄膜的生长过程。
2
For the typical highenergyelectron spectrum in outer radiation belt, the charging time for dielectrics is of the order of an hour.
对于典型的外辐射带高能电子能谱情况,介质的充电时间为小时量级。
3
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection HighEnergyElectron Diffraction (RHEED) after step-etching the samples.