Highelectronmobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super highelectronmobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
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Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).