We found that the emittance and the electrochemical capacitance are equal to the geometriccapacitance in the classical limit.
发现在经典情况下，电导虚部和电化学电容都等于经典的几何电容。
2
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;