It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.
提出了腐蚀机理，光照激发位错处产生电子空穴对，加速位错处的腐蚀速率。
2
An electric field created by adding impurities to the silicon splits the electron-hole pairs apart, which results in an electric current.
给分离的硅参入杂质电子区域就产生电子空穴对分离从而形成电流。
3
It is found that the more the phonon dispersion, the larger is the effective mass, and the smaller the screening radius of electron-hole effective interacting potential.