Electromigration in metal thin filminterconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
2
The methods of 3d interconnection can be classified into the wire bonding, flip chip, through silicon via (TSV) and film wire technology, whose advantages and disadvantages are analyzed.
将实现3d互连的方法分为引线键合、倒装芯片、硅通孔、薄膜导线等，并对它们的优缺点进行了分析。
3
The reliability of an interconnectionfilm and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.