Empirical formulae for the critical heat flux of the film breakdown and heat transfer correlations for normal and subnormal films are obtained by fitting the test data.

During the long operational time, the film insulation is exposed to the electrical, thermal and mechanical stresses, which will cause insulation degradation and lead to breakdown finally.

The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.