However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时，单个氧空位引起的栅漏电流增加可以忽略。
3
In the case of center-positioned gate, moving die is not separated from fixed die due to the interference of the biscuit part and the cutting of gate is ery difficult after pulling out the product.